jmnic product specification silicon pnp power transistors 2sa1077 description ? with to-220 package ? complement to type 2sc2527 ? high transition frequency ? excellent safe operating area applications ? high-frequency power amplifier ? audio power amplifiers ? switching regulators ? dc-dc converters pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector-emitter voltage open base -120 v v ebo emitter-base voltage open collector -7 v i c collector current -10 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2sa1077 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ,r be = ?t -120 v v (br)cbo collector-base breakdown voltage i c =-50 | a ,i e =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-50 | a ,i c =0 -7 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -0.9 -1.8 v v be base-emitter on voltage i c =-5a ; v ce =-5v -1.25 -1.7 v i cbo collector cut-off current v cb =-120v; i e =0 -50 | a i ceo collector cut-off current v ce =-120v; i b =0 -1 ma i ebo emitter cut-off current v eb =-7v; i c =0 -50 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-5a ; v ce =-5v 40 f t transition frequency i c =-1a ; v ce =-10v;f=10mhz 30 60 mhz c ob output capacitance i e =0 ; v cb =-10v;f=1mhz 300 470 pf switching times t r rise time 0.15 | s t stg storage time 0.5 | s t f fall time i c =-7.5a; r l =4 |? i b1 =-i b2 =-0.75a; 0.11 | s
jmnic product specification 3 silicon pnp power transistors 2sa1077 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
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